drain junction meaning in Chinese
漏结
Examples
- Based on the hydrodynamic energy transport model , the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied . the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth . research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ) , the threshold voltage increases , the sub - threshold characteristics and the drain current driving capability degrade , and the hot carrier immunity becomes better in deep - sub - micron pmosfet . the short - channel - effect suppression and hot - carrier - effect immunity are better , while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow . so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基于能量输运模型对由凹槽深度改变引起的负结深的变化对深亚微米槽栅pmosfet性能的影响进行了分析，对所得结果从器件内部物理机制上进行了讨论，最后与由漏源结深变化导致的负结深的改变对器件特性的影响进行了对比.研究结果表明随着负结深(凹槽深度)的增大，槽栅器件的阈值电压升高，亚阈斜率退化，漏极驱动能力减弱，器件短沟道效应的抑制更为有效，抗热载流子性能的提高较大，且器件的漏极驱动能力的退化要比改变结深小.因此，改变槽深加大负结深更有利于器件性能的提高